Samsung announces cutting-edge 512 GB DDR5 RAM module
The new tech will find support in Intel’s upcoming Xeon Scalable processors
Who doesn’t want more speed at less power?
Samsung Electronics announced a cutting-edge new 512GB DDR5 RAM module Thursday – which it said would consume 13% less electricity while performing at twice the speed of existing high-end tech.
The South Korea-based tech company said its industry-first product is based on a new technology could High-K Metal Gate, or HKMG, and will be supported by Intel’s upcoming, state-of-the-art Xeon Scalable processors.
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“By bringing this type of process innovation to DRAM manufacturing, we are able to offer our customers high-performance, yet energy-efficient memory solutions to power the computers needed for medical research, financial markets, autonomous driving, smart cities and beyond,” Young-Soo Sohn, the company’s vice president of DRAM memory planning, said in a statement.
The product is expected to meet supercomputing, AI and machine-learning needs before eventually arriving in consumer computers.
Samsung developed HKMG chips in 2018 – they use hafnium instead of silicon and have traditionally been used in logic semiconductors, the company said. But by putting it in DRAM modules, it will save on power consumption.
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The 512 GB capacity is obtained by stacking eight layers of 16 GB chips, according to the company.
The new DDR5 modules are expected to come out later this year – as well Intel’s Xeon Scalable processors, codenamed “Sapphire Rapids.”
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“As the amount of data to be moved, stored and processed increases exponentially, the transition to DDR5 comes at a critical inflection point for cloud datacenters, networks and edge deployments,” Intel Vice President and GM of Memory and IO Technology Carolyn Duran said in a statement.
Due to supply and demand issues, the new RAM is expected to launch with a price hike of 30 to 40% before stabilizing, Bloomberg reported.